new product SIA437DJ www.vishay.com vishay siliconix s12-2728-rev. a, 12-nov-12 1 document number: 62777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 p-channel 20 v (d-s) mosfet features ?trenchfet ? power mosfet ? thermally enhanced powerpak ? sc-70 package - small footprint area - low on-resistance ?100 % r g tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ? providing low voltage drop in smart phones, tablet pcs, mobile computing: - battery switches - load switches - power management notes a. t c = 25 c. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/doc?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequa te bottom side sold er interconnection. e. rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. maximum under steady state conditions is 80 c/w. product summary v ds (v) r ds(on) ( ? ) (max.) i d (a) a q g (typ.) - 20 0.0145 at v gs = - 4.5 v - 29.7 28 nc 0.0205 at v gs = - 2.5 v - 25 0.0330 at v gs = - 1.8 v - 19.7 0.0650 at v gs = - 1.5 v - 4 powerpak sc-70-6l-single 6 5 4 1 2 3 d d d d g s s 2.05 mm 2.05 mm ordering information: SIA437DJ-t1-ge3 (lead (pb)-free and halogen-free) s g d p-channel mo s fet marking code x x x b u x lot traceability and date code part # code absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 8 continuous drain current (t j = 150 c) t c = 25 c i d - 29.7 a t c = 70 c - 23.8 t a = 25 c - 12.6 b, c t a = 70 c - 10 b, c pulsed drain current (t = 300 s) i dm - 60 continuous source-d rain diode current t c = 25 c i s - 16 t a = 25 c - 2.9 b, c maximum power dissipation t c = 25 c p d 19 w t c = 70 c 12 t a = 25 c 3.5 b, c t a = 70 c 2.2 b, c operating junction and storage temperature range t j , t stg - 50 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, f t ? 5 s r thja 28 36 c/w maximum junction-to-case (drain) steady state r thjc 5.3 6.5
new product SIA437DJ www.vishay.com vishay siliconix s12-2728-rev. a, 12-nov-12 2 document number: 62777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not su bject to production testing. ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 11 mv/c v gs(th) temperature coefficient ? v gs(th) /t j 2.5 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.4 - 0.9 v gate-source leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds ? - 5 v, v gs = - 4.5 v - 10 a drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 8 a 0.0120 0.0145 ? v gs = - 2.5 v, i d = - 5 a 0.0170 0.0205 v gs = - 1.8 v, i d = - 2 a 0.0250 0.0330 v gs = - 1.5 v, i d = - 2 a 0.0370 0.0650 forward transconductance a g fs v gs = - 10 v, i d = - 8 a 32 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 2340 pf output capacitance c oss 305 reverse transfer capacitance c rss 270 total gate charge q g v ds = - 10 v, v gs = - 8 v, i d = - 13 a 60 90 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 13 a 28 43 gate-source charge q gs 4.2 gate-drain charge q gd 6.8 gate resistance r g f = 1 mhz 1.6 8 16 ? turn-on delay time t d(on) v dd = - 10 v, r l = 1 ? i d ? - 10 a, v gen = - 4.5 v, r g = 1 ? 20 40 ns rise time t r 22 45 turn-off delay time t d(off) 100 200 fall time t f 37 75 turn-on delay time t d(on) v dd = - 10 v, r l = 1 ? i d ? - 10 a, v gen = - 8 v, r g = 1 ? 10 20 rise time t r 10 20 turn-off delay time t d(off) 120 240 fall time t f 34 70 drain-source body diode characteristics continuous source-d rain diode current i s t c = 25 c - 16 a pulse diode forward current i sm - 60 body diode voltage v sd i s = - 10 a, v gs = 0 v - 0.75 - 1.2 v body diode reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s, t j = 25 c 12 25 ns body diode reverse recovery charge q rr 410nc reverse recovery fall time t a 7.5 ns reverse recovery rise time t b 4.5
new product SIA437DJ www.vishay.com vishay siliconix s12-2728-rev. a, 12-nov-12 3 document number: 62777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge transfer characteristics capacitance on-resistance vs. junction temperature 0 8 16 24 32 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v d s - drain-to- s ource voltage (v) v gs = 1.5 v v gs = 2 v v gs = 5 v thru 2.5 v v gs = 1 v 0.000 0.020 0.040 0.060 0.080 0.100 0 8 16 24 32 40 r d s (on) - on-re s i s tance () i d - drain current (a) v gs = 1.5 v v gs = 2.5 v v gs gs = 4.5 v 0 2 4 6 8 10 0 20 40 60 v gs - g ate-to- s ource voltage (v) q g - total g ate charge (nc) v d s = 16 v v d s = 5 v v d s = 10 v i d = 15 a 0 2 4 6 8 10 0.0 0.4 0.8 1.2 1.6 2.0 i d - drain current (a) v gs - g ate-to- s ource voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 800 1600 2400 3200 4000 0 5 10 15 20 c - capacitance (pf) v d s - drain-to- s ource voltage (v) c i ss ss ss s (on) - on-re s i s tance (normalized) t j - junction temperature ( c) v gs = 1.5 v; i d = 2 a v gs = 4.5 v, 2.5 v; i d = 8 a v gs = 1.8 v; i d = 2 a
new product SIA437DJ www.vishay.com vishay siliconix s12-2728-rev. a, 12-nov-12 4 document number: 62777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) soure-drain diode forward voltage threshold voltage on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient safe operating area, junction-to-ambient 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s - s ource current (a) v s d - s ource-to-drain voltage (v) t j = 150 c t j = 25 c 0.1 0.2 0.3 0.4 0.5 0.6 0.7 - 50 - 25 0 25 50 75 100 125 150 v gs (th) (v) t j - temperature ( c) i d = 250 a 0.000 0.010 0.020 0.030 0.040 0.050 0 1 2 3 4 5 r d s (on) - on-re s i s tance () v gs - g ate-to- s ource voltage (v) t j = 125 c t j = 25 c i d = 8 a power (w) time (s) 10 1000 0.1 0.01 0.001 100 1 0 5 10 15 20 25 30 0.01 0.1 1 10 100 0.1 1 10 100 i d - drain current (a) v d s - drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified 10 s 100 s 100 m s limited by r d s (on) * 1 m s t a = 25 c bvd ss limited 10 m s 1 s dc
new product SIA437DJ www.vishay.com vishay siliconix s12-2728-rev. a, 12-nov-12 5 document number: 62777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) current derating* power derating ? ? ? ? ? ? * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 i d - drain current (a) t c - ca s e temperature ( c) 0 5 10 15 20 25 50 75 100 125 150 t c - case temperature (c) power dissipation (w)
new product SIA437DJ www.vishay.com vishay siliconix s12-2728-rev. a, 12-nov-12 6 document number: 62777 for technical questions, contact: pmostechsupport @vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-ambient normalized thermal transient impedance, junction-to-case ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62777 . 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 0.05 0.02 square wave pulse duration (s) normalized effec tive transient thermal impedance 1 0.1 0.01 single pulse t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 80 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 10 -3 10 -2 10 -4 1 0.1 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 0.02 single pulse 0.05 10 -1
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix document number: 70486 www.vishay.com revision: 21-jan-08 11 application note recommended pad layout for powerpak ? sc70-6l single 1 0.300 (0.012) 0.350 (0.014) 2.200 (0.087) 1.500 (0.059) 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) 0.355 (0.014) 0.235 (0.009) 0.475 (0.019) 0.870 (0.034) 0.275 (0.011) 0.350 (0.014) 0.550 (0.022) 0.650 (0.026) dimensions in mm/(inches) return to index
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